P-Channel V A (Tc) 60W (Tc) Through Hole TOAB. IRF 6A, V, Ohm, P-Channel Power. MOSFET. This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level. 13 May Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per.

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IRF NTE Equivalent NTE POWER MOSFET P-CHANN – Wholesale Electronics

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Orders Wish list Track my order s. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. Powered by GRobotronics Team. Japan South Korea Taiwan English. Notify me when this product is back in stock. See a list of all our websites.

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Vishay – MOSFETs – IRF, SiHF – Power MOSFET

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